We report on the development of a radio frequency (RF) linear accelerator (linac) for multiple-ion beams that is made from stacks of low cost wafers. The accelerator lattice is comprised of RF-acceleration gaps and electrostatic quadrupole focusing elements that are fabricated on 4” wafers made from printed circuit board or silicon. We demonstrate ion acceleration with an effective gradient of about 0.5MV m−1 with an array of 3 × 3 beams. The total ion beam energies achieved to date are in the 10 keV range with total ion currents in tests with noble gases of ∼0.1 mA. We discuss scaling of the ion energy (by adding acceleration modules) and ion currents (with more beams) for applications of this multi-beam RF linac technology to ion implantation and surface modification of materials.